An Accurate Device-Level Simulation Method to Estimate Cross Sections of Single Event Upsets by Silicon Thickness in Raised Layer

Kentaro Kojima, Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi. An Accurate Device-Level Simulation Method to Estimate Cross Sections of Single Event Upsets by Silicon Thickness in Raised Layer. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-5, IEEE, 2019. [doi]

Abstract

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