Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications

Shraddha Kothari, Chandan Joishi, Dhirendra Vaidya, Hasan Nejad, Benjamin Colombeau, Swaroop Ganguly, Saurabh Lodha. Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 214-217, IEEE, 2015. [doi]

Abstract

Abstract is missing.