External Links

Cite Key

Statistics

  • References: 0
  • Cited by: 0
  • Reviews: 0
  • Bibliographies: 0

PDF

Researchr

Researchr is a web site for finding, collecting, sharing, and reviewing scientific publications, for researchers by researchers.

Sign up for an account to create a profile with publication list, tag and review your related work, and share bibliographies with your co-authors.

Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate

Antony Abel Kunnath, Maxime Moulin, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther. Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, FL, USA, October 27-30, 2024. pages 80-83, IEEE, 2024. [doi]

Authors

Antony Abel Kunnath

This author has not been identified. Look up 'Antony Abel Kunnath' in Google

Maxime Moulin

This author has not been identified. Look up 'Maxime Moulin' in Google

Sayed Ali Albahrani

This author has not been identified. Look up 'Sayed Ali Albahrani' in Google

Dirk Schwantuschke

This author has not been identified. Look up 'Dirk Schwantuschke' in Google

Arnulf Leuther

This author has not been identified. Look up 'Arnulf Leuther' in Google
runs on