Antony Abel Kunnath, Maxime Moulin, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther. Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, FL, USA, October 27-30, 2024. pages 80-83, IEEE, 2024. [doi]
@inproceedings{KunnathMASL24,
title = {Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate},
author = {Antony Abel Kunnath and Maxime Moulin and Sayed Ali Albahrani and Dirk Schwantuschke and Arnulf Leuther},
year = {2024},
doi = {10.1109/BCICTS59662.2024.10745682},
url = {https://doi.org/10.1109/BCICTS59662.2024.10745682},
researchr = {https://researchr.org/publication/KunnathMASL24},
cites = {0},
citedby = {0},
pages = {80-83},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, FL, USA, October 27-30, 2024},
publisher = {IEEE},
isbn = {979-8-3315-4124-8},
}