A 126 mm:::2::: 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology

Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume, Kazuki Homma, Teruhiko Ito, Yoshinori Sakamoto, Masahiro Shimizu, Yoshinori Ikeda, Osamu Tsuchiya, Kazunori Furusawa. A 126 mm:::2::: 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. IEICE Transactions, 90-C(11):2146-2156, 2007. [doi]

Abstract

Abstract is missing.