Kyehyun Kyung, Hi-Choon Lee, Ki-Whan Song, Ho-Sung Song, Keewook Jung, Joon-Seo Moon, Byoung-Sul Kim, Sung-Burn Cho, Changhyun Kim, Soo-In Cho. A 2.5-V 2.0-Gbyte/s 288-Mb packet-based DRAM with enhanced cell efficiency and noise immunity. J. Solid-State Circuits, 36(5):735-743, 2001. [doi]
Abstract is missing.