An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique - researchr publication

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Mohammadreza Dolatpoor Lakeh, Jean-Baptiste Kammerer, Enagnon Aguénounon, Dylan Issartel, Jean-Baptiste Schell, Sven Rink, Andreia Cathelin, Francis Calmon, Wilfried Uhring. An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique. Sensors, 21(11):4014, 2021. [doi]

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