H. Lakhdhar, Nathalie Labat, A. Curutchet, N. Defrance, M. Lesecq, J.-C. De Jaeger, Nathalie Malbert. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectronics Reliability, 64:594-598, 2016. [doi]
Abstract is missing.