UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton. UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. Microelectronics Reliability, 50(9-11):1312-1315, 2010. [doi]

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