An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory - researchr publication

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W. S. Lau, Peizhen Yang, V. Ho, L. F. Toh, Y. Liu, S. Y. Siah, L. Chan. An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory. Microelectronics Reliability, 48(10):1641-1648, 2008. [doi]

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