22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST

Dong Uk Lee, Ho Sung Cho, Jihwan Kim, Young Jun Ku, Sangmuk Oh, Chul Dae Kim, Hyun Woo Kim, Wooyoung Lee, Tae-Kyun Kim, Tae Sik Yun, Min-Jeong Kim, SeungGyeon Lim, Seong-Hee Lee, Byung Kuk Yun, Jun Il Moon, Ji-Hwan Park, Seokwoo Choi, Young-Jun Park, Chang Kwon Lee, Chunseok Jeong, Jae-Seung Lee, Sang-Hun Lee, Woo Sung We, Jong-Chan Yun, Doobock Lee, Junghyun Shin, Seungchan Kim, Junghwan Lee, Jiho Choi, Yucheon Ju, Myeong-Jae Park, Kang Seol Lee, Youngdo Hur, Daeyong Shim, Sangkwon Lee, Junhyun Chun, Kyowon Jin. 22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST. In 2020 IEEE International Solid- State Circuits Conference, ISSCC 2020, San Francisco, CA, USA, February 16-20, 2020. pages 334-336, IEEE, 2020. [doi]

Abstract

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