Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo. Impact of Gate Offset on PBTI of p-GaN Gate HEMTs. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 21-1, IEEE, 2022. [doi]

Abstract

Abstract is missing.