Characterization of Slow Traps in SiGe MOS Interfaces by TiN/Y2O3 Gate Stacks

T. E. Lee, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi. Characterization of Slow Traps in SiGe MOS Interfaces by TiN/Y2O3 Gate Stacks. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

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