A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier With Slotline-Based Power-Combining Technique Achieving >22dBm Saturated Output Power and >10% Power Back-off Efficiency

Xingcun Li, Wenhua Chen, Shuyang Li, Huibo Wu, Xiang Yi, Ruonan Han, Zhenghe Feng. A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier With Slotline-Based Power-Combining Technique Achieving >22dBm Saturated Output Power and >10% Power Back-off Efficiency. In IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022. pages 316-318, IEEE, 2022. [doi]

Abstract

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