Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS process

Ning Li, Takeshi Inoue, Takuichi Hirano, Jian Pang, Rui Wu, Kenichi Okada, Hitoshi Sakane, Akira Matsuzawa. Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS process. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 254-257, IEEE, 2015. [doi]

Abstract

Abstract is missing.