Hang Li, Kalpathy B. Sundaram, Yuanzhong (Paul) Zhou, Javier A. Salcedo, Jean-Jacques Hajjar. Characterization and Modeling of the Transient Safe Operating Area in LDMOS Transistors. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-5, IEEE, 2019. [doi]
Abstract is missing.