PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics

Y. Li, K. L. Wang, S. Y. Di, P. Huang, G. Du, X. Y. Liu. PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 7-1, IEEE, 2018. [doi]

Abstract

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