Y. Li, K. L. Wang, S. Y. Di, P. Huang, G. Du, X. Y. Liu. PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 7-1, IEEE, 2018. [doi]
@inproceedings{LiWDHDL18,
title = {PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics},
author = {Y. Li and K. L. Wang and S. Y. Di and P. Huang and G. Du and X. Y. Liu},
year = {2018},
doi = {10.1109/IRPS.2018.8353702},
url = {https://doi.org/10.1109/IRPS.2018.8353702},
researchr = {https://researchr.org/publication/LiWDHDL18},
cites = {0},
citedby = {0},
pages = {7},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5479-8},
}