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3 doped with Zr high-K gate dielectrics

K. C. Lin, P. C. Juan, C.-H. Liu, M.-C. Wang, C.-H. Chou. 3 doped with Zr high-K gate dielectrics. Microelectronics Reliability, 55(11):2198-2202, 2015. [doi]

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K. C. Lin

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P. C. Juan

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C.-H. Liu

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M.-C. Wang

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C.-H. Chou

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