Systematical study of 14nm FinFET reliability: From device level stress to product HTOL

Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, HyunWoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park. Systematical study of 14nm FinFET reliability: From device level stress to product HTOL. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]

Abstract

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