Impact of Al+ implantation on the Switching Characteristics of Al2O3/La2O3/Al2O3 multilayer RRAM devices

Hongxia Liu, Xing Wang. Impact of Al+ implantation on the Switching Characteristics of Al2O3/La2O3/Al2O3 multilayer RRAM devices. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

Abstract is missing.