A study on the improved programming characteristics of flash memory with Si::3::N::4::/SiO::2:: stacked tunneling dielectric

L. Liu, J. P. Xu, L. L. Chen, P. T. Lai. A study on the improved programming characteristics of flash memory with Si::3::N::4::/SiO::2:: stacked tunneling dielectric. Microelectronics Reliability, 49(8):912-915, 2009. [doi]

Abstract

Abstract is missing.