2 2-layer 32Gb ReRAM memory device in 24nm technology

Tz-Yi Liu, Tian Hong Yan, Roy Scheuerlein, Yingchang Chen, Jeffrey KoonYee Lee, Gopinath Balakrishnan, Gordon Yee, Henry Zhang, Alex Yap, Jingwen Ouyang, Takahiko Sasaki, Sravanti Addepalli, Ali Al-Shamma, Chin-Yu Chen, Mayank Gupta, Greg Hilton, Saurabh Joshi 0002, Achal Kathuria, Vincent Lai, Deep Masiwal, Masahide Matsumoto, Anurag Nigam, Anil Pai, Jayesh Pakhale, Chang Hua Siau, Xiaoxia Wu, Ronald Yin, Liping Peng, Jang Yong Kang, Sharon Huynh, Huijuan Wang, Nicolas Nagel, Yoichiro Tanaka, Masaaki Higashitani, Tim Minvielle, Chandu Gorla, Takayuki Tsukamoto, Takeshi Yamaguchi, Mutsumi Okajima, Takayuki Okamura, Satoru Takase, Takahiko Hara, Hirofumi Inoue, Luca Fasoli, Mehrdad Mofidi, Ritu Shrivastava, Khandker Quader. 2 2-layer 32Gb ReRAM memory device in 24nm technology. In 2013 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2013, San Francisco, CA, USA, February 17-21, 2013. pages 210-211, IEEE, 2013. [doi]

Abstract

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