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Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution

Chieh Roger Lo, Teng-Hao Yeh, Wei-Chen Chen, Hang-Ting Lue, Keh-Chung Wang, Chih-Yuan Lu, Yao-Wen Chang, Yung-Hsiang Chen, Chu-Yung Liu. Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

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