A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated $\pm \hbox{3.5} \ ^{\circ}\hbox{C} \ \hbox{3}\sigma$ Relative Inaccuracy From $-\hbox{55} \ ^{\circ}\hbox{C}$ to 105 $^{\circ}\hbox{C}$

Li Lu, Scott T. Block, David E. Duarte, Changzhi Li. A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated $\pm \hbox{3.5} \ ^{\circ}\hbox{C} \ \hbox{3}\sigma$ Relative Inaccuracy From $-\hbox{55} \ ^{\circ}\hbox{C}$ to 105 $^{\circ}\hbox{C}$. IEEE Trans. on Circuits and Systems, 60-II(11):771-775, 2013. [doi]

@article{LuBDL13,
  title = {A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated $\pm \hbox{3.5} \ ^{\circ}\hbox{C} \ \hbox{3}\sigma$ Relative Inaccuracy From $-\hbox{55} \ ^{\circ}\hbox{C}$ to 105 $^{\circ}\hbox{C}$},
  author = {Li Lu and Scott T. Block and David E. Duarte and Changzhi Li},
  year = {2013},
  doi = {10.1109/TCSII.2013.2281746},
  url = {http://dx.doi.org/10.1109/TCSII.2013.2281746},
  researchr = {https://researchr.org/publication/LuBDL13},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. on Circuits and Systems},
  volume = {60-II},
  number = {11},
  pages = {771-775},
}