L. Lu, Z. Chen, Angus T. Bryant, Enrico Santi, Jerry L. Hudgins, Patrick R. Palmer. Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs. In Conference Record of the 2007 IEEE Industry Applications Conference Forty-Second IAS Annual Meeting, New Orleans, LA, USA, September 23-27, 2007. pages 342-349, IEEE, 2007. [doi]
Abstract is missing.