Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD

Weijun Luo, Xiaoliang Wang, Lunchun Guo, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li, Jinmin Li. Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD. Microelectronics Journal, 39(12):1710-1713, 2008. [doi]

Abstract

Abstract is missing.