Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields

Mingyao Ma, Kaiqi Chu, Mingyue Zhan, Ye Wang, Fang Liu. Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields. Microelectronics Reliability, 88:75-79, 2018. [doi]

Abstract

Abstract is missing.