A. Madan, S. C. Bose, P. J. George, Chandra Shekhar. Evaluation of Device Parameters of HfO2/SiO2/Si Gate Dielectric Stack for MOSFETs. In 18th International Conference on VLSI Design (VLSI Design 2005), with the 4th International Conference on Embedded Systems Design, 3-7 January 2005, Kolkata, India. pages 386-391, IEEE Computer Society, 2005. [doi]
Abstract is missing.