Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs - researchr publication authors

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Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Chasin, A. Grill, Michiel Vandemaele, Geert Hellings, A.-M. El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov. Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-7, IEEE, 2019. [doi]

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