Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components

K. Manikanta, Umakanta Nanda, Chandan Kumar Pandey. Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components. Microelectronics Journal, 144:106100, February 2024. [doi]

Abstract

Abstract is missing.