Breakdown investigation in GaN-based MIS-HEMT devices

Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso. Breakdown investigation in GaN-based MIS-HEMT devices. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 377-380, IEEE, 2014. [doi]

Abstract

Abstract is missing.