SPICE modelling of hot-carrier degradation in Si::1-::::x::Ge::x:: S/D and HfSiON based pMOS transistors

J. Martín-Martínez, E. Amat, M. B. Gonzalez, P. Verheyen, R. Rodríguez, M. Nafría, X. Aymerich, E. Simoen. SPICE modelling of hot-carrier degradation in Si::1-::::x::Ge::x:: S/D and HfSiON based pMOS transistors. Microelectronics Reliability, 50(9-11):1263-1266, 2010. [doi]

Abstract

Abstract is missing.