Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

J. Martín-Martínez, R. Rodríguez, M. Nafría, X. Aymerich, James H. Stathis. Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectronics Reliability, 47(4-5):665-668, 2007. [doi]

Abstract

Abstract is missing.