Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu 0001, Tingao Tang. Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs. In 2011 IEEE 9th International Conference on ASIC, ASICON 2011, Xiamen, China, October 25-28, 2011. pages 555-557, IEEE, 2011. [doi]
Abstract is missing.