Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs - researchr publication authors

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Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu 0001, Lingli Wang, Tingao Tang. Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs. Microelectronics Journal, 43(11):894-897, 2012. [doi]

This author has not been identified. Look up 'Guanghui Mei' in GoogleThis author has not been identified. Look up 'Peicheng Li' in GoogleThis author has not been identified. Look up 'Guangxi Hu' in GoogleThis author has not been identified. Look up 'Ran Liu 0001' in GoogleThis author has not been identified. Look up 'Lingli Wang' in GoogleThis author has not been identified. Look up 'Tingao Tang' in Google

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