Impact of AlGaN Doping Concentration on the Analog/RF Performance of a Double Gate Underlap n-AlGaN/GaN MOSHEMT

Rajrup Mitra, Akash Roy, Atanu Kundu, Mousiki Kar. Impact of AlGaN Doping Concentration on the Analog/RF Performance of a Double Gate Underlap n-AlGaN/GaN MOSHEMT. In 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020, Howrah, India, March 4-6, 2020. pages 1-4, IEEE, 2020. [doi]

Abstract

Abstract is missing.