A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy - researchr publication

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Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, Ken Takeuchi. A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy. J. Solid-State Circuits, 48(9):2239-2249, 2013. [doi]

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