Development of High-Stability, Low-Leakage 6Tr-SRAM with Single Data Line and Single Power Supply Using SOTB Process - researchr publication

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Shin Miyamoto, Nobuaki Kobayashi. Development of High-Stability, Low-Leakage 6Tr-SRAM with Single Data Line and Single Power Supply Using SOTB Process. In 2018 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2018, Hong Kong, China, July 8-11, 2018. pages 387-392, IEEE Computer Society, 2018. [doi]

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