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Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation

Kazuhiro Mochizuki, Ken-ichi Tanaka, Takashi Shiota, Takafumi Taniguchi, Hiroyuki Uchiyama. Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation. IEICE Transactions, 89-C(7):943-948, 2006. [doi]

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