Reliability and Energy Efficiency of the Tunneling Transistor-Based 6T SRAM Cell in Sub-10 nm Domain

Mahmood Uddin Mohammed, Masud H. Chowdhury. Reliability and Energy Efficiency of the Tunneling Transistor-Based 6T SRAM Cell in Sub-10 nm Domain. IEEE Trans. on Circuits and Systems, 65-II(12):1829-1833, 2018. [doi]

Abstract

Abstract is missing.