Effect Of Fringing Capacitances In Sub 100 Nm Mosfet s With High-K Gate Dielectrics

Nihar R. Mohapatra, A. Dutta, Madhav P. Desai, V. Ramgopal Rao. Effect Of Fringing Capacitances In Sub 100 Nm Mosfet s With High-K Gate Dielectrics. In 14th International Conference on VLSI Design (VLSI Design 2001), 3-7 January 2001, Bangalore, India. pages 479, IEEE Computer Society, 2001. [doi]

Abstract

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