Robustness study of 1700 V 45 mΩ SiC MOSFETs

Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel. Robustness study of 1700 V 45 mΩ SiC MOSFETs. In IEEE International Conference on Industrial Technology, ICIT 2018, Lyon, France, February 20-22, 2018. pages 830-834, IEEE, 2018. [doi]

Abstract

Abstract is missing.