The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

F. Monsieur, Y. Denis, D. Rideau, V. Quenette, G. Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, J. Lacord. The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 254-257, IEEE, 2014. [doi]

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