F. Monsieur, Y. Denis, D. Rideau, V. Quenette, G. Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, J. Lacord. The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 254-257, IEEE, 2014. [doi]
@inproceedings{MonsieurDRQGTJGL14,
title = {The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies},
author = {F. Monsieur and Y. Denis and D. Rideau and V. Quenette and G. Gouget and Clément Tavernier and Hervé Jaouen and Gérard Ghibaudo and J. Lacord},
year = {2014},
doi = {10.1109/ESSDERC.2014.6948808},
url = {http://dx.doi.org/10.1109/ESSDERC.2014.6948808},
researchr = {https://researchr.org/publication/MonsieurDRQGTJGL14},
cites = {0},
citedby = {0},
pages = {254-257},
booktitle = {44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014},
publisher = {IEEE},
isbn = {978-1-4799-4378-4},
}