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F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo. On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectronics Reliability, 43(8):1199-1202, 2003. [doi]
Abstract is missing.