On the role of holes in oxide breakdown mechanism in inverted nMOSFETs

F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo. On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectronics Reliability, 43(8):1199-1202, 2003. [doi]