F. Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, S. Poli, M.-Y. Chuang, W. Tian, D. Varghese, R. Wise. TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 333-336, IEEE, 2014. [doi]
Abstract is missing.