28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low-Power Deep Learning - researchr publication

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Haruki Mori, Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto. 28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low-Power Deep Learning. In 25th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2018, Bordeaux, France, December 9-12, 2018. pages 161-164, IEEE, 2018. [doi]

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