Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

Atsushi Moriwaki, Shinji Hara. Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates. IEICE Electronic Express, 19(1):20210486, 2022. [doi]

Abstract

Abstract is missing.